Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography

Materials Science and Engineering: B

Volumn 164, Issue 2, 2009, Pages 76-79

  Huang, H W ^a,b   Lin, C H ^b   Huang, J K ^a   Lee, K Y ^b   Lin, C F ^c   Yu, C C ^b   Tsai, J Y ^b   Hsueh, R ^b   Kuo, H C ^a   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Luxtaltek Corporation   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

GaN; Light emitting diodes (LEDs); Nano hole patterned sapphire substrate (NHPSS); Nano imprint lithography (NIL)

Indexed keywords

EFFICIENCY; EXTRACTION; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NANOIMPRINT LITHOGRAPHY; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODE; LIGHT OUTPUT POWER; LIGHTEMITTING DIODE; NANO-HOLE PATTERNED SAPPHIRE SUBSTRATE; NANO-IMPRINT LITHOGRAPHY; NANOHOLES; NITRIDE-BASED LIGHT EMITTING DIODES; PATTERNED SAPPHIRE; PATTERNED SAPPHIRE SUBSTRATE;

LIGHT EMITTING DIODES;

EID: 69749122760     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2009.07.006     Document Type: Article

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