Recombination mechanism in short-wavelength GaN/AlGaN quantum wells

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 323-328

  Fuhrmann, D ^a   Retzlaff, T ^a   Rossow, U ^a   Hangleiter, A ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL EFFECTS; ULTRAVIOLET DETECTORS;

INTERNAL QUANTUM EFFICIENCY (IQE); NON-RADIATIVE LIFETIMES; NON-RADIATIVE RECOMBINATION; RADIATIVE RECOMBINATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 23844526179     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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