Bulk single-crystal growth of ternary AlxGa1-xN from solution in gallium under high pressure

Journal of Crystal Growth

Volumn 311, Issue 16, 2009, Pages 3971-3974

  Belousov, A ^a   Katrych, S ^a   Jun, J ^a   Zhang, J ^b   Gunther D ^a   Sobolewski, Roman ^b   Karpinski, J ^a   Batlogg, B ^a  

^a ETH ZURICH   (Switzerland)

^b University of Rochester   (United States)

Author keywords

A1. Phase diagram; B1. AlGaN; B1. Growth from solutions; B1. Hiph pressure crystal growth; B1. Single crystal growth; B2. Semiconducting III V materials

Indexed keywords

A1. PHASE DIAGRAM; B1. ALGAN; B1. GROWTH FROM SOLUTIONS; B1. HIPH-PRESSURE CRYSTAL GROWTH; B1. SINGLE-CRYSTAL GROWTH; B2. SEMICONDUCTING III-V MATERIALS;

ALUMINUM; CRYSTAL GROWTH; CRYSTALLIZATION; GAS ABSORPTION; GRAIN BOUNDARIES; LASER ABLATION; MASS SPECTROMETRY; MULTIPHOTON PROCESSES; PHASE DIAGRAMS; SEMICONDUCTOR GROWTH;

SINGLE CRYSTALS;

EID: 68149151037     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.06.047     Document Type: Article

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