Relatively low temperature synthesis of graphene by radio frequency plasma enhanced chemical vapor deposition

Applied Surface Science

Volumn 257, Issue 15, 2011, Pages 6531-6534

  Qi, J L ^a,b   Zheng, W T ^b   Zheng, X H ^a   Wang, X ^b   Tian, H W ^b  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

Graphene; Low temperature; PECVD

Indexed keywords

FLOW OF GASES; GRAPHENE; LOW TEMPERATURE EFFECTS; NICKEL; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RADIO WAVES; SILICA; SUBSTRATES; TEMPERATURE; THIN FILMS; WAVE PLASMA INTERACTIONS;

DEPOSITION TIME; ELECTRONIC MATERIALS; FEW-LAYER GRAPHENE; LARGE-AREA GRAPHENE; LOW TEMPERATURE SYNTHESIS; LOW TEMPERATURES; RADIO FREQUENCY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITIONS; SYNTHESIS METHOD;

PLASMA CVD;

EID: 79954576330     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.02.069     Document Type: Article

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