Electrical Curie temperature modulation in (Ga,Mn)As field-effect transistors with Mn composition from 0.027 to 0.200

Journal of Applied Physics

Volumn 103, Issue 7, 2008, Pages

  Nishitani, Y ^a   Chiba, D ^a,b   Matsukura, F ^a,b   Ohno, H ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURIE TEMPERATURE; ELECTRIC FIELDS; FERROMAGNETIC MATERIALS; MANGANESE;

ELECTRICAL CURIE TEMPERATURE MODULATION; EXTERNAL ELECTRIC FIELD;

FIELD EFFECT TRANSISTORS;

EID: 42149128903     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2838159     Document Type: Conference Paper

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