Structure, stress state and piezoelectric property of GaN nanopyramid arrays

Applied Physics Express

Volumn 4, Issue 4, 2011, Pages

  Liu, Jianqi ^a,b,c   Wang, Jianfeng ^a,d   Gong, Xiaojing ^a   Huang, Jun ^a,b,c   Xu, Ke ^a,d   Zhou, Taofei ^a   Zhong, Haijian ^a   Qiu, Yongxin ^a   Cai, Demin ^d   Ren, Guoqiang ^a,d   Yang, Hui ^a,d  

^a SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^d Joint RF Power Device and Circuit Technology Center   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE ATOMIC FORCE MICROSCOPES; CONTACT MODES; ELECTRODELESS; HIGH RESOLUTION X RAY DIFFRACTION; MICRO-RAMAN SPECTRA; NANOPYRAMID ARRAYS; PHOTO-ELECTROCHEMICAL ETCHING; PIEZOELECTRIC CURRENTS; PIEZOELECTRIC PROPERTY; STRESS STATE;

PIEZOELECTRICITY; RAMAN SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 79954448673     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.045001     Document Type: Article

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