Zinc cadmium oxide thin film transistors fabricated at room temperature

Thin Solid Films

Volumn 519, Issue 13, 2011, Pages 4361-4365

  Lee, Deuk Hee ^a,b   Kim, Sangsig ^b   Lee, Sang Yeol ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

Pulsed laser deposition; Thin film transistors; Zinc cadmium oxide; Zinc oxide

Indexed keywords

ACTIVE CHANNELS; ACTIVE LAYER; BACK-GATE; CADMIUM OXIDE; HEXAGONAL STRUCTURES; OFF-CURRENT; P-TYPE SI; PREFERRED GROWTH; ROOM TEMPERATURE; SUBTHRESHOLD SWING; TRANSPARENT THIN FILM TRANSISTOR; VISIBLE RANGE; WURTZITES;

CADMIUM; CARRIER CONCENTRATION; DEPOSITION; PULSED LASER DEPOSITION; PULSED LASERS; THIN FILMS; VAPOR DEPOSITION; ZINC; ZINC OXIDE; ZINC SULFIDE;

THIN FILM TRANSISTORS;

EID: 79954440669     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.02.079     Document Type: Article

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