Dependence of the electroluminescence on the spacer layer growth temperature of multilayer quantum-dot laser structures

IEEE Journal of Quantum Electronics

Volumn 45, Issue 1, 2009, Pages 79-85

  Hasbullah, Nurul F ^a   Ng, Jo Shein ^a   Liu, Hui Yun ^a,b   Hopkinson, Mark ^a   David, John P R ^a   Badcock, Tom J ^a   Mowbray, David J ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Activation energy; Current measurement; Electroluminescence (EL); Gallium arsenide; IEL; Quantum dot (QD); Radiative recombination; Spacer growth temperature; Stationary state; Temperature dependence; Temperature measurement

Indexed keywords

ACTIVATION ENERGY; ARSENIC COMPOUNDS; CHEMICAL ACTIVATION; ELECTRIC CURRENT MEASUREMENT; ELECTROLUMINESCENCE; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GROWTH (MATERIALS); GROWTH TEMPERATURE; LIGHT EMISSION; LUMINESCENCE; QUANTUM ELECTRONICS; QUENCHING; SEMICONDUCTING GALLIUM; TEMPERATURE DISTRIBUTION; TEMPERATURE MEASUREMENT;

CURRENT MEASUREMENT; ELECTROLUMINESCENCE (EL); GALLIUM ARSENIDE; IEL; QUANTUM DOT (QD); RADIATIVE RECOMBINATION; SPACER GROWTH TEMPERATURE; STATIONARY STATE; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 59749089367     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2008.2002671     Document Type: Article

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