Silicon carbide nanowires grown on 4H-SiC substrates by chemical vapor deposition

Materials Research Society Symposium Proceedings

Volumn 1178, Issue , 2009, Pages 103-108

  Kotamraju, Siva ^a   Krishnan, Bharat ^a   Koshka, Yaroslav ^a   Sundaresan, Siddarth ^b   Issa, Hany ^b   Singh, Ranbir ^b  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

^b GENESIC SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; CHLORINE COMPOUNDS; EPITAXIAL GROWTH; GROWTH TEMPERATURE; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS;

CARBON PRECURSORS; CHEMICAL VAPOR DEPOSITIONS (CVD); HOMOEPITAXIAL GROWTH; PRECURSOR CHEMISTRY; PRECURSOR FLOW RATES; SILICON CARBIDE NANOWIRES; SILICON PRECURSORS; VAPOR-LIQUID-SOLID GROWTH;

CHEMICAL VAPOR DEPOSITION;

EID: 77954269047     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1178-aa03-06     Document Type: Conference Paper

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