Inner potential fluctuation in SiC nanowires with modulated interior structure

Materials Letters

Volumn 61, Issue 14-15, 2007, Pages 3134-3137

  Yoshida, H ^a   Kohno, H ^a   Ichikawa, S ^b   Akita, T ^b   Takeda, S ^a  

^a OSAKA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Electron energy loss spectroscopy; Electron holography; Nanowire; Silicon carbide

Indexed keywords

CRYSTAL STRUCTURE; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON HOLOGRAPHY; GROWTH (MATERIALS); SILICON CARBIDE; STACKING FAULTS;

INNER POTENTIAL FLUCTUATION; MODULATED INTERIOR STRUCTURES; SELF ORGANIZED PROCESS;

NANOWIRES;

EID: 34247492905     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2006.11.011     Document Type: Article

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