Direct synthesis of 2H-SiC nanowhiskers

Chemical Physics Letters

Volumn 381, Issue 5-6, 2003, Pages 628-633

  Yao, Y ^a   Lee, S T ^a   Li, F H ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

METHANE; SILICON CARBIDE; SILICON DERIVATIVE; SILICON OXIDE; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL REACTION; ELECTRON DIFFRACTION; MOLECULAR SIZE; RAMAN SPECTROMETRY; REACTION ANALYSIS; ROENTGEN SPECTROSCOPY; SYNTHESIS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0242574923     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2003.09.149     Document Type: Article

References (24)

1. Verma A.R., Krishna P.K. Polymorphism and Polytypism in Crystals. 1966;Wiley, New York.
2. Madelung O. Langdolt-Bornstein New Series, Group III, vol. 22: Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds. 1987;Springer, Berlin.
3. Nilsson H.-E., Hjelm M. J. Appl. Phys. 86(11):1999;6230.
4. Bechstedt F., Käckell P. Phys. Rev. Lett. 75(11):1995;2180.
5. Ke S., Zi J., Zhang K., Xie X. Phys. Rev. B. 54(12):1996;8789.
6. Bertilsson K., Dubaric E., Nilsson H.-E., Hjelm M., Petersson C.S. Diam. Relat. Mater. 10:2001;1283.
7. Powell J.A. J. Appl. Phys. 40:1969;4660.
8. Stan M.A., Patton M.O., Warner J.D., Yang J.W., Pirouz P. Appl. Phys. Lett. 64(20):1994.
9. Hilmas G.E., Tien T.-Y. J. Mater. Sci. 34:1999;5613.
10. Carrillo-Heian E.M., Xue H., Ohyanagi M., Munir Z.A. J. Am. Ceram. Soc. 83(5):2000;1103.
11. Powell J.A., Hill H.A. J. Appl. Phys. 43(4):1972;1400.
12. Dai H., Wong E.W., Lu Y.Z., Fan S., Lieber C.M. Nature. 375(29):1995;769.
13. Zhang Y., Suenaga K., Colliex C., Ijima S. Science. 284(14):1998;973.
14. Zhang Y., Ichihashi T., Landree E., Nihey F., Iijima S. Science. 285(10):1999;1719.
15. Lai H.L., Wong N.B., Zhou X.T., Peng H.Y., Au F.C.K., Wang N., Bello I., Lee C.S., Lee S.T., Duan X.F. Appl. Phys. Lett. 76(3):2000;294.
16. Shi W., Zheng Y., Peng H., Wang N., Lee C.S., Lee S.T. J. Am. Ceram. Soc. 83(12):2000;3228.
17. Wang Z.L., Dai Z.R., Gao R.P., Bai Z.G., Gole J.L. Appl. Phys. Lett. 77(21):2000.
18. Gao Y.H., Bando Y., Kurashima K., Sato T. J. Mater. Sci. 37:2002;2023.
19. Lee S.T., Wang N., Zhang Y.F., Tang Y.H. MRS Bull. 24(8):1999;36.
20. Daulton T.L., Bernatowicz T.J., Lewis R.S., Messenger S., Stadermann F.J., Amari S. Science. 296:1852.
21. Li J.C., Lee C.S., Lee S.T. Chem. Phys. Lett. 355:2002;147.
22. Nakashima S., Harima H. Phys. Status Solidi A. 162:1997;39.
23. Zhang S-L., Zhu B.-F., Huang F., Yan Y., Shang E.-Y., Fan S., Han W. Solid State Comm. 111:1999;647.
24. Berman I., Ryan C.E. J. Crys. Growth. 9:1971;314.