Effective mobility model of graphene nanoribbon in parabolic band energy

Modern Physics Letters B

Volumn 25, Issue 10, 2011, Pages 739-745

  Amin, N A ^a   Ahmadi, M T ^a   Johari, Z ^a   Mousavi, S M ^a   Ismail, R ^a  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

Author keywords

conductance; effective mobility; field effect transistor; Graphene; graphene nanoribbon

Indexed keywords

EID: 79953825096     PISSN: 02179849     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217984911026073     Document Type: Article

References (39)

1. Z. H. Chen et al., Physica E 40(2) (2007) 228-232.
2. K. S. Novoselov et al., Science 306 (2004) 666-669.
3. X.-R. Wang et al., Phys. Rev. Lett. 100 (2008) 206803.
4. J. H. Chen et al., Nature Phys. 4 (2008) 377-381.
5. R. S. Shishir and D. K. Ferry, J. Phys. Condens. Matter 21 (2009) 232204.
6. K. I. Bolotin et al., Solid State Commun. 146 (2008) 351-355.
7. S. Adam et al., Proc. Natl. Acad. Sci. USA 104(47) (2007) 18392-18397.
8. R. Yagi et al., Physica E 42(4) (2010) 673-676.
9. M. Y. Han et al., Phys. Rev. Lett. 98(20) (2007) 206805.
10. T. Durkop, B. M. Kim and M. S. Fuhrer, J. Phys.: Condens. Matter 16 (2004) R553-R580.
11. T. Dürkop, S. A. Getty et al., Nano Lett. 4(1) (2003) 35-39.
12. M. T. Ahmadi, Z. Johari, N. A. Amin, A. H. Fallahpour and R. Ismail, J. Nanomater. 2010, Article ID 753738, doi:10.1155/2010/753738 (2010).
13. S. Villa, A. L. Lacaita et al., IEEE Trans. Electron Devices 45(1) (1998) 110-115.
14. C. L. Huang and G. S. Gildenblat, IEEE Trans. Electron Devices 37(5) (1990) 1289-1300.
15. E. Gnani, A. Gnudi et al., IEEE Trans. Electron Devices 57(1) (2010) 336-344.
16. K. Rogdakis, S. Poli, E. Bano, K. Zekentes and M. G. Pala, Nanotechnology 20 (2009) 295202.
17. N. A. Amin et al., Mod. Phys. Lett. (2010) to be published.
18. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, 2002).
19. M. Lundstrom, T. Low and D. Berdebes, Low Bias Transport in Graphene: An Introduction, Lecture notes, http://nanohub.org/resources/7435 (2009).
20. M. Lundstrom and J. Guo, Nanoscale Transistors (Springer, 2006).
21. Y. V. Nazarov and Y. M. Blanter, Quantum Transport: Introduction to Nanoscience (Cambridge University Press, 2010).
22. S. Thornhill et al., Graphene Nanoribbon Field-effect Transistors, 978-1-4244-1684 (IEEE, 2008).
23. R. Grassi, A. Gnudi et al., Graphene nanoribbons FETs for high-performance logic applications: Perspectives and challenges, 9th Int. Conf. on Solid-State and Integrated-Circuit Technology, 2008, ICSICT (2008).
24. G.-C. Liang, N. Neophytou et al., IEEE Trans. Electron Devices 54(4) (2007) 677-682.
25. R. F. Pierret, Advanced Semiconductor Fundamentals (Addison-Wesley, 1987).
26. L. A. Falkovsky, Phys. Rev. B 75 (2007).
27. D. Xu et al., Nat. Nanotechnol. 3 (2008) 491-495.
28. V. E. Dorgan, M.-H. Bae and E. Pop, Mobility and Saturation Velocity in Graphene on SiO2, arXiv:1005.2711v1 [cond-mat.mes-hall] (2010).
29. Y.-B. Zhang et al., Nature 438 (2005) 201-204.
30. D. Vasileska, Drift-Diffusion Model, Mobility Modeling, http://nanohub.org/resources/1514 (2006).
31. M. Lundstrom, Fundamentals of Carrier Transport, 2nd edn. (Cambridge University Press, 2000).
32. Y. M. Meziani et al., Magnetoresistance mobility measurements in sub [0.1 μm Si MOSFETs, in Proc. 34th European Solid-State Device Res. Conf. (ESSDERC 2004) (2004).
33. M. J. Allen, V. C. Tung and R. B. Kaner, Chem. Rev. 110 (2010) 132-145.
34. S. V. Morozov, K. S. Novoselov et al., Phys. Rev. Lett. 100(1) (2008) 016602.
35. A. Betti, G. Fiori et al., Physical insights on graphene nanoribbon mobility through atomistic simulations, IEEE Int. Electron Devices Meeting (IEDM) (2009).
36. T. Fang, A. Konar et al., Phys. Rev. B 78(20) (2008) 205403.
37. Y. X. Yang and R. Murali, IEEE Electron Device Lett. 31(3) (2010) 237-239.
38. B. Huang, Q.-M. Yan et al., Frontiers of Physics in China 4(3) (2009) 269-279.
39. Y. W. Son, M. L. Cohen et al., Phys. Rev. Lett. 97(21) (2006).