Negative magnetoresistance due to charge fluctuation in mono-layer graphene at the minimum conductivity point

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 4, 2010, Pages 673-676

  Yagi, Ryuta ^a   Fukada, Seiya ^a   Kobara, Hiroaki ^a   Ogita, Norio ^a   Udagawa, Masayuki ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Magnetoresistance; Minimum conductivity point; Monolayer graphene; Potential fluctuation

Indexed keywords

CHARGE FLUCTUATIONS; GRAPHENES; HIGH MAGNETIC FIELDS; MAGNETOTRANSPORTS; NEGATIVE MAGNETO-RESISTANCE; POTENTIAL FLUCTUATION; POTENTIAL FLUCTUATIONS; RESIDUAL CARRIER;

GRAPHENE; GRAPHITE; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MONOLAYERS;

ELECTRIC RESISTANCE;

EID: 76949087027     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.12.001     Document Type: Article

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