Nanostructure array fabrication with a size-controllable natural lithography

Applied Physics Letters

Volumn 71, Issue 20, 1997, Pages 2934-2936

  Haginoya, Chiseki ^a   Ishibashi, Masayoshi ^a   Koike, Kazuyuki ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LITHOGRAPHY; NANOSTRUCTURED MATERIALS; POLYSTYRENES; REACTIVE ION ETCHING; SILICON WAFERS; SUBSTRATES;

POLYSTYRENE BEADS; SIZE CONTROLLABLE NATURAL LITHOGRAPHY;

NANOTECHNOLOGY;

EID: 0031269615     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120220     Document Type: Article

References (26)

1. H. Fang, R. Zeller, and P. J. Stiles, Appl. Phys. Lett. 55, 1433 (1989).
2. M. Green, M. Garcia-Parajo, and F. Khaleque, Appl. Phys. Lett. 62, 264 (1993).
3. F. Rousseaux, D. Decanini, F. Carcenac, E. Cambril, and M. F. Raver, J. Vac. Sci. Technol. B 13, 2787 (1995).
4. H. R. Stuart and D. G. Hall, Appl. Phys. Lett. 69, 2327 (1996).
5. R. Nötzel, J. Temmyo, and T. Tamamura, Nature (London) 369, 131 (1994).
6. H. W. Deckman and J. H. Dunsmuir, J. Vac. Sci. Technol. B 1, 1109 (1983).
7. K. Itaya, S. Sugawara, K. Arai, and S. Saito, J. Chem. Eng. Jpn. 17, 514 (1984).
8. M. J. Tierney and C. R. Martin, J. Electrochem. Soc. 137, 3789 (1990).
9. K. Sato, Y. Kawamura, S. Tanaka, K. Uchida, and H. Kohida, Sens. Actuators A 21-23, 948 (1990).
10. R. V. Parthasarathy and C. R. Martin, Nature (London) 369, 298 (1994).
11. C. R. Musil, D. Jeggle, H. W. Lehmann, L. Scandella, J. Gobrecht, and M. Dobeli, J. Vac. Sci. Technol. B 13, 2781 (1995).
12. S. Y. Chou, M. S. Wei, P. R. Krauss, and P. B. Fischer, J. Appl. Phys. 76, 673 (1994).
13. W. Chen and H. Ahmed, Appl. Phys. Lett. 63, 1116 (1993).
14. J. C. Wolfe, S. V. Pendharkar, P. Ruchhoeft, S. Sen, M. D. Morgan, W. E. Horne, R. C. Tiberio, and J. N. Randall, J. Vac. Sci. Technol. B 14, 3896 (1996).
15. A. Chen, R. K. Kupka, F. Rousseaux, F. Carcenac, D. Decanini, M. F. Ravet, and H. Launois, J. Vac. Sci. Technol. B 12, 3959 (1994).
16. K. Ogai, Y. Kimura, R. Shimizu, J. Fujita, and S. Matsui, Appl. Phys. Lett. 66, 1560 (1995).
17. T. A. Savas, M. L. Schattenburg, J. M. Carter, and H. I. Smith, J. Vac. Sci. Technol. B 14, 4167 (1996).
18. J. P. Spallas, R. D. Boyd, J. A. Britten, A. M. Hawryluk, and M. D. Perry, J. Vac. Sci. Technol. B 14, 2005 (1996).
19. H. W. Deckman and J. H. Dunsmuir, Appl. Phys. Lett. 41, 377 (1982).
20. H. Masuda and K. Fukuda, Science 268, 1466 (1995).
21. R. Micheletto, H. Fukuda, and M. Ohtsu, Langmuir 11, 3333 (1995).
22. J. C. Hulteen and R. P. V. Duyne, J. Vac. Sci. Technol. A 13, 1553 (1995).
23. K. Douglas and N. A. Clark, Appl. Phys. Lett. 48, 676 (1986).
24. H. W. Deckman, B. Abeles, J. H. Dunsmuir, and C. B. Roxlo, Appl. Phys. Lett. 50, 504 (1987).
25. Z. Huang, N. E. McGruer, and K. Warner, IEEE Electron Device Lett. 14, 121 (1993).
26. M. Moskovits, Rev. Mod. Phys. 57, 783 (1985).