Study of MOCVD growth of InGaAsSb/AlGaAsSb/GaSb heterostructures using two different aluminium precursors TMAl and DMEAAl

Opto-Electronics Review

Volumn 19, Issue 2, 2011, Pages 140-144

  Wesolowski M ^a   Strupinski W ^a   Motyka, M ^b   Sek G ^b   Dumiszewska, E ^a   Caban, P ^a   Jasik, A ^a   Wojcik A ^a   Pierscinski K ^a   Pierscinska D ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

AlGaAsSb; antimonides; InGaAsSb; MOCVD; quantum wells

Indexed keywords

GALLIUM COMPOUNDS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; MATERIALS PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ORGANIC LASERS; ORGANOMETALLICS; OXYGEN; QUANTUM WELL LASERS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS;

ALGAASSB; ANTIMONIDES; CARBON CONTAMINATION; EPITAXIAL TECHNOLOGIES; INGAASSB; OPTIMISATION PROCEDURES; PHOTOREFLECTANCE SPECTROSCOPY; QUANTUM WELL STRUCTURES;

ALUMINUM ALLOYS;

EID: 79953772865     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: 10.2478/s11772-011-0020-8     Document Type: Article

References (19)

1. J. G. Kim, L. Shterengas, R. U. Martinelli, and G. L. Belenky, "High-power room-temperature continuous wave operation of 2. 7 and 2. 8 μm In(Al)GaAsSb/GaSb diode lasers", Appl. Phys. Lett. 83, 1926-1928 (2003).
2. M. Rattunde, J. Schmitz, G. Kaufel, M. Kelemen, J. Weber, and J. Wagner, "GaSb-based 2. X μm quantum-well diode lasers with low beam divergence and high output power", Appl. Phys. Lett. 88, 081115-081117 (2006).
3. A. Joullie and P. Christol, "GaSb-based mid-infrared 2-5-μm laser diodes", CR Phys. 4, 621-637 (2003).
4. C. A. Wang and H. K. Choi, "GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapour phase epitaxy", Appl. Phys. Lett. 70, 802-804 (1997).
5. C. A. Wang, "Organometallic vapour phase epitaxial growth of AlSb-based alloys", J. Cryst. Growth170, 725-731 (1997).
6. C. A. Wang, K. F. Jensen, A. C. Jones, and H. K. Choi, "n-AlGaSb and GaSb/AlGaSb double-heterostructure lasers grown by organometallic vapour phase epitaxy", Appl. Phys. Lett. 68, 400-402 (1996).
7. C. A. Wang and H. K. Choi, "OMVPE growth of GaInAsSb/AlGaAsSb for quantum-well diode lasers", J. Electron. Mater. 26, 1231-1236 (1997).
8. Z. Yin and X. Tang, "A review of energy bandgap engineering in III-V semiconductor alloys for mid-infrared laser applications", Solid-State Electron. 51, 6-15 (2007).
9. C. A. Wang, "Progress and continuing challenges in GaSb-based III-V alloys and heterostructures grown by organometallic vapour-phase epitaxy", J. Cryst. Growth272, 664-681 (2004).
10. P. S. Dutta and H. L. Bhat, "The physics and technology of gallium antimonide: An emerging optoelectronic material", J. Appl. Phys. 81, 5821-5870 (1997).
11. B. R. Bennett, R. Magno, J. B. Boos, W. Kruppa, and M. G. Ancona, "Antimonide-based compound semiconductor electronics: A review", Solid-State Electron. 49, 1875-1895 (2005).
12. E. Plis, J. B. Rodriguez, H. S. Kim, G. Bishop, Y. D. Sharma, L. R. Dawson, S. Krishn, S. J. Lee, C. E. Jones, and V. Gopal, "Type II InAs/GaSb strain layer superlattice detectors with p-on-n polarity", Appl. Phys. Lett. 91, 133512-133514 (2007).
13. J. G. Cederberg, M. J. Hafich, R. M. Biefeld, and M. Palmisiano, "The preparation of InGa(As)Sb and Al(Ga)AsSb films and diodes on GaSb for thermophotovoltaic applications using metal-organic chemical vapour deposition", J. Cryst. Growth248, 289-295 (2003).
14. M. G. Mauk and V. M. Andreev, "GaSb-related materials for TPV cells", Semicond. Sci. Tech. 18, 191-201 (2003).
15. A. Aardvark, N. J. Mason, and P. J. Walker, "The growth of antimonides by MOVPE", Prog. Cryst. Growth Ch. 35, 207-241 (1997).
16. F. Dimroth, C. Agert, and A. W. Bett, "Growth of Sb-based materials by MOVPE", J. Cryst. Growth248, 265-273 (2003).
17. Ch. Giesen, A. Szymakowski, S. Rushworth, M. Heuken, and K. Heime, "MOVPE of AlGaAsSb using TTBAl as an alternative aluminium precursor", J. Cryst. Growth221, 450-455 (2000).
18. R. M. Biefeld, "The metal-organic chemical vapour deposition and properties of III-V antimony-based semiconductor materials", Mater. Sci. Eng. 36, 105-142 (2002).
19. J. J. Hill, A. A. Aquino, C. P. A. Mulcahy, N. Harwood, A. C. Jones, and T. S. Jones, "The adsorption and thermal decomposition of trimethylaluminium and dimethylaluminium hydride on GaAs(100)", Surf. Sci. 340, 49-56 (1995).