Effects of O2/Ar mixing and annealing on the properties of MgTiO3 films prepared by RF magnetron sputtering

Surface and Coatings Technology

Volumn 201, Issue 3-4, 2006, Pages 654-659

  Chen, Yuan Bin ^a   Huang, Cheng Liang ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Annealing; Grain size; Leakage current; MgTiO3; RF magnetron sputtering; Thin film

Indexed keywords

ANNEALING; CAPACITANCE; CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MICROSTRUCTURE; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ANNEALING TEMPERATURES; CRYSTALLINITY; SPUTTERING GAS;

MAGNESIUM COMPOUNDS;

ANNEALING; CAPACITANCE; CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; MAGNESIUM COMPOUNDS; MAGNETRON SPUTTERING; MICROSTRUCTURE; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EID: 33748433642     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2005.12.033     Document Type: Article

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