Comparative study of low temperature growth of InAs and InMnAs quantum dots

Nanotechnology

Volumn 22, Issue 19, 2011, Pages

  Placidi, E ^a,b   Zallo, E ^b   Arciprete, F ^b   Fanfoni, M ^b   Patella, F ^b   Balzarotti, A ^b  

^a CNR   (Italy)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE STUDIES; DEPOSITED MATERIALS; HIGH TEMPERATURE; INAS; LOW TEMPERATURE GROWTH; QUANTUM DOT; SPATIAL CORRELATIONS; THREE-DIMENSIONAL TRANSITION; VORONOI; WETTING LAYER;

INDIUM ARSENIDE; MANGANESE; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM DOTS;

ARSENIC; INDIUM; INDIUM ARSENIDE; MANGANESE; ORGANOARSENIC DERIVATIVE; QUANTUM DOT;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; COLD; COMPARATIVE STUDY; DIFFUSION; KINETICS; METHODOLOGY; NANOTECHNOLOGY;

ARSENIC; ARSENICALS; COLD TEMPERATURE; DIFFUSION; INDIUM; KINETICS; MANGANESE; MICROSCOPY, ATOMIC FORCE; NANOTECHNOLOGY; QUANTUM DOTS;

EID: 79953276815     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/19/195602     Document Type: Article

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