Highly controlled wet and dry etching of gallium doped (Mg, Zn) O epilayers grown using metalorganic vapor phase epitaxy

Journal of the Electrochemical Society

Volumn 158, Issue 5, 2011, Pages

  Tresback, J ^a   Pierce, J M ^a   Ali, Y S ^a   Krahnert, A ^a   Wen, H ^a   Kumar, M ^a   Adekore, B T ^a  

^a LumenZ Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION RATE; DRY-ETCH; EPILAYERS GROWN; ETCH PRODUCTS; GA-DOPED ZNO; ICP-RIE; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHING; METAL-ORGANIC VAPOR PHASE EPITAXY; PLANE SAPPHIRE; RATE-LIMITING STEPS; THERMAL ACTIVATION ENERGIES; WET AND DRY; WET ETCH PROCESS; WET ETCH RATE; ZNO;

ACTIVATION ENERGY; CHLORINE; DESORPTION; DRY ETCHING; EPILAYERS; EPITAXIAL GROWTH; INDUCTIVELY COUPLED PLASMA; MAGNESIUM; METALLORGANIC VAPOR PHASE EPITAXY; PHOSPHORIC ACID; PLASMA ETCHING; REACTION RATES; REACTIVE ION ETCHING; VAPORS; ZINC; ZINC OXIDE;

WET ETCHING;

EID: 79953166440     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3568951     Document Type: Article

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