Inductively coupled plasma reactive ion etching of ZnO using C 2F6 and NF3-based gas mixtures

Semiconductor Science and Technology

Volumn 21, Issue 7, 2006, Pages 971-974

  Lee, Gun Kyo ^a   Moon, Jong Ha ^a   Lee, Byung Teak ^a  

^a Chonnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY MIXTURES; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; REACTIVE ION ETCHING; SURFACE ROUGHNESS; ZINC OXIDE;

CHAMBER CONTAMINATION; FLUORINE PLASMAS; GAS MIXTURES; SIDEWALLS;

THIN FILMS;

EID: 33745279432     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/7/024     Document Type: Article

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