The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer

Applied Physics A: Materials Science and Processing

Volumn 75, Issue 4, 2002, Pages 545-549

  Chen, X Y ^a   Wong, K H ^b   Mak, C L ^b   Liu, J M ^a   Yin, X B ^a   Wang, M ^a   Liu, Z G ^a  

^a NANJING UNIVERSITY   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; FILM GROWTH; MAGNESIA; METALLIC FILMS; POLYCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON; SURFACES;

CRYSTALLINE QUALITY; MAGNESIUM OXIDE BUFFER; ORIENTATION SELECTIVE GROWTH;

LANTHANUM COMPOUNDS;

EID: 0036778673     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390101048     Document Type: Article

References (18)