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Volumn 50, Issue 3, 2011, Pages

Heterojunction diodes comprised of n-type silicon and p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite

(3) Ohmagari, Shinya a Al Riyami, Sausan a Yoshitake, Tsuyoshi a

a KYUSHU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED; CAPACITANCE VOLTAGE MEASUREMENTS; FORWARD VOLTAGE; GENERATION-RECOMBINATION PROCESS; HETEROJUNCTION DIODES; I - V CURVE; IDEALITY FACTORS; N TYPE SILICON; P-TYPE; REVERSE VOLTAGES; SI SUBSTRATES;

AMORPHOUS CARBON; AMORPHOUS FILMS; AMORPHOUS SILICON; BORON; CARBON CARBON COMPOSITES; CARBON FILMS; CARRIER CONCENTRATION; COMPOSITE FILMS; ELECTRIC RECTIFIERS; GRAIN BOUNDARIES; HETEROJUNCTIONS; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79953095772 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.035101 Document Type: Article

Times cited : (10)

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