Formation of p-type semiconducting ultrananocrystalline diamond/hydrogenated amorphous carbon composite films by boron doping

Japanese Journal of Applied Physics

Volumn 49, Issue 3 PART 1, 2010, Pages

  Ohmagari, Shinya ^a   Yoshitake, Tsuyoshi ^a   Nagano, Akira ^a   Ohtani, Ryota ^b   Setoyama, Hiroyuki ^b   Kobayashi, Eiichi ^b   Hara, Takeshi ^c   Nagayama, Kunihito ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b Kyushu Synchrotron Light Research Center   (Japan)

^c ARIAKE NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON ATOM; BORON-DOPED; BORON-DOPING; ELECTRICAL CONDUCTIVITY; GRAPHITE TARGET; HYDROGEN ATOMS; HYDROGENATED AMORPHOUS CARBON (A-C:H); NEAR-EDGE X-RAY ABSORPTION FINE STRUCTURE SPECTRUM; P-TYPE; P-TYPE CONDUCTION; THERMAL ANALYSIS; ULTRANANOCRYSTALLINE DIAMONDS;

ACTIVATION ENERGY; AMORPHOUS CARBON; AMORPHOUS FILMS; ARRHENIUS PLOTS; BORON; CARBON CARBON COMPOSITES; CARBON FILMS; DANGLING BONDS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; HYDROGEN BONDS; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTING FILMS; THERMOANALYSIS; WAVELET TRANSFORMS;

COMPOSITE FILMS;

EID: 77953964231     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.031302     Document Type: Article

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