Synthesis of Ge nanocrystals by atom beam sputtering and subsequent rapid thermal annealing

Solid State Communications

Volumn 150, Issue 43-44, 2010, Pages 2122-2126

  Srinivasa Rao, N ^a   Pathak, A P ^a   Sathish, N ^a   Devaraju, G ^a   Saikiran, V ^a   Kulriya, P K ^b   Agarwal, D C ^b   Sai Saravanan, G ^c   Avasthi, D K ^b  

^a UNIVERSITY OF HYDERABAD   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^c Gallium Arsenide Enabling Technology Centre   (India)

Author keywords

B. Atom beam sputtering; C. Raman spectroscopy; C. RBS; C. XRD

Indexed keywords

ANNEALED SAMPLES; ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; ATOM BEAMS; B. ATOM BEAM SPUTTERING; C. RAMAN SPECTROSCOPY; C. RBS; COMPOSITE TARGET; COSPUTTERING; CRYSTALLINE NATURE; GE NANOCRYSTALS; MATRIX; RAMAN SCATTERING SPECTRA; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SIZE VARIATION; VIBRATIONAL MODES; XRD;

AMORPHOUS FILMS; ATOMIC SPECTROSCOPY; ATOMS; GERMANIUM; NANOCRYSTALS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON COMPOUNDS; X RAY DIFFRACTION;

COMPOSITE FILMS;

EID: 77957980727     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.09.014     Document Type: Article

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