Optical investigations of germanium nanoclusters - Rich SiO2 layers produced by ion beam synthesis

Journal of Non-Crystalline Solids

Volumn 355, Issue 24-27, 2009, Pages 1347-1354

  Krzyzanowska, H ^a   Kulik, M ^a   Zuk, J ^a   Rzodkiewicz, W ^b   Kobzev, A P ^c   Skorupa, W ^d  

^a MARIA CURIE SK ODOWSKA UNIVERSITY   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^d INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Ge nanostructures; Ion implantation; Optical constants; Rutherford backscattering; Spectroscopic ellipsometry

Indexed keywords

ANNEALING PROCESS; ANNEALING TEMPERATURES; BAND-TO-BAND TRANSITION; BLUE SHIFT; CONCENTRATION-DEPTH PROFILE; EXTINCTION COEFFICIENTS; GE ATOM; GE NANOCRYSTALLITES; GE NANOSTRUCTURES; GERMANIUM NANOCLUSTERS; HIGHER TEMPERATURES; ION BEAM SYNTHESIS; OPTICAL INVESTIGATION; OXYGEN DEFICIENCY; REALISTIC MODEL; REFRACTION INDEX; RUTHERFORD BACKSCATTERING; RUTHERFORD BACKSCATTERING SPECTROMETRY; SI LAYER; SI SUBSTRATES; STRUCTURAL CHANGE; ULTRAVIOLET ABSORPTION; VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY;

ANNEALING; BACKSCATTERING; ION BOMBARDMENT; ION IMPLANTATION; NANOCLUSTERS; OPTICAL CONSTANTS; OXYGEN; REFRACTIVE INDEX; SEMICONDUCTING GERMANIUM; SILICON COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY;

RUTHERFORD BACKSCATTERING SPECTROSCOPY;

EID: 67649993947     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2009.05.024     Document Type: Article

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