Room-temperature electroluminescence of p-ZnxMg 1-xO:Na/n-ZnO p-n junction light emitting diode

Journal of Semiconductors

Volumn 30, Issue 8, 2009, Pages

  Ye, Zhizhen ^a   Zhang, Liqiang ^a   Huang, Jingyun ^a   Zhang, Yinzhu ^a   Zhu, Liping ^a   Lu, Bin ^a   Lu, Jianguo ^a   Wang, Lei ^a   Jin, Yizheng ^a   Jiang, Jie ^a   Xue, Ya ^a   Zhang, Jun ^a   Lin, Shisheng ^a   Yang, Dan ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Electroluminescence; LED; Na doped; ZnO

Indexed keywords

BAND GAP ENGINEERING; CURRENT VOLTAGE CURVE; DIRECT CURRENT; LED; LOW RESISTANCE; NA-DOPED ZNO; P-N JUNCTION; P-TYPE; PHOTOLUMINESCENCE SPECTRUM; RECTIFYING BEHAVIORS; ROOM TEMPERATURE; SINGLE-CRYSTAL SUBSTRATES; X-RAY PHOTO; ZNO; ZNO LAYERS;

DISTILLATION; ELECTROLUMINESCENCE; LIGHT; LIGHT EMISSION; PHOTOELECTRON SPECTROSCOPY; PHYSICAL OPTICS; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTOR JUNCTIONS; SODIUM; ZINC; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 70349164717     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/30/8/081001     Document Type: Article

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