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Volumn 109, Issue 5, 2011, Pages

Light-induced degradation in compensated p- and n-type Czochralski silicon wafers

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED PHYSICS; BORON CONCENTRATIONS; BORON CONTENT; BORON-OXYGEN COMPLEX; BORON-OXYGEN DEFECTS; COMPENSATION RATIO; CZOCHRALSKI; CZOCHRALSKI SILICON WAFERS; DEFECT CONCENTRATIONS; DOPING CONCENTRATION; LIGHT-INDUCED DEGRADATION; MINORITY CARRIER LIFETIMES; N TYPE SILICON; P-TYPE;

EID: 79953011783     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3552302     Document Type: Article
Times cited : (40)

References (21)
  • 12
    • 0036533230 scopus 로고    scopus 로고
    • Silicon feedstock for the multi-crystalline photovoltaic industry
    • DOI 10.1016/S0927-0248(01)00147-7, PII S0927024801001477
    • D. Sarti and R. Einhaus, Sol. Energy Mater. Sol. Cells 72, 27 (2002). 10.1016/S0927-0248(01)00147-7 (Pubitemid 34181840)
    • (2002) Solar Energy Materials and Solar Cells , vol.72 , Issue.1-4 , pp. 27-40
    • Sarti, D.1    Einhaus, R.2
  • 17
    • 44349172292 scopus 로고    scopus 로고
    • Measuring dopant concentrations in compensated p -type crystalline silicon via iron-acceptor pairing
    • DOI 10.1063/1.2936840
    • D. Macdonald, A. Cuevas, and L. J. Geerligs, Appl. Phys. Lett. 92, 2021191 (2008). 10.1063/1.2936840 (Pubitemid 351733901)
    • (2008) Applied Physics Letters , vol.92 , Issue.20 , pp. 202119
    • MacDonald, D.1    Cuevas, A.2    Geerligs, L.J.3
  • 19


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.