RTA effects on the formation process of embedded luminescent Si nanocrystals in SiO2

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 781-785

  Iwayama, T S ^a   Hama, T ^b   Hole, D E ^c  

^a AICHI UNIVERSITY OF EDUCATION   (Japan)

^b KANAZAWA UNIVERSITY   (Japan)

^c UNIVERSITY OF SUSSEX   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

LUMINESCENT DEVICES; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); RAPID THERMAL ANNEALING; SILICA; SILICON;

EMBEDDED LUMINESCENT; FORMATION PROCESSES; LUMINESCENCE INTENSITY;

NANOCRYSTALS;

EID: 34247165099     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.028     Document Type: Article

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