Control of embedded Si nanocrystals in SiO2 by rapid thermal annealing and enhanced photoluminescence characterization

Surface and Coatings Technology

Volumn 201, Issue 19-20 SPEC. ISS., 2007, Pages 8490-8494

  Iwayama, T S ^a   Hama, T ^a   Hole, D E ^b   Boyd, I W ^c  

^a AICHI UNIVERSITY OF EDUCATION   (Japan)

^b UNIVERSITY OF SUSSEX   (United Kingdom)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Ion implantation; Nanocrystal; Photoluminescence; Si

Indexed keywords

PEAK ENERGY; PHOTOLUMINESCENCE SPECTRA;

CRYSTAL GROWTH; CRYSTALLIZATION; ION IMPLANTATION; NUCLEATION; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SILICA;

NANOCRYSTALLINE SILICON;

CRYSTAL GROWTH; CRYSTALLIZATION; ION IMPLANTATION; NANOCRYSTALLINE SILICON; NUCLEATION; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SILICA;

EID: 34447548863     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2006.12.032     Document Type: Article

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