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Solid State Communications

Volumn 151, Issue 9, 2011, Pages 693-696

Leakage currents through In/MgO/n-type Si/In structures

(4) Tsao, Hou Yen a Lin, Yow Jon a Chen, Ya Hui b Chang, Hsing Cheng b

a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION (Taiwan)

b FENG CHIA UNIVERSITY (Taiwan)

Author keywords

A. Semicoductors; A. Thin films; C. Point defects

Indexed keywords

A. SEMICODUCTORS; A. THIN FILMS; C. POINT DEFECTS; ELECTRICAL CONDUCTION; INTERFACIAL PROPERTY; POOLE-FRENKEL; POOLE-FRENKEL EMISSION; SCHOTTKY;

DEFECTS; POINT DEFECTS; THIN FILMS;

LEAKAGE CURRENTS;

EID: 79952991834 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2011.02.019 Document Type: Article

Times cited : (8)

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