Raman characterization of the structural evolution in amorphous and partially nanocrystalline hydrogenated silicon thin films prepared by PECVD

Journal of Raman Spectroscopy

Volumn 42, Issue 3, 2011, Pages 415-421

  Li, Zhi ^a   Li, Wei ^a   Jiang, Yadong ^a   Cai, Haihong ^a   Gong, Yuguang ^a   He, Jian ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

a Si:H; nc Si:H; plasma enhanced chemical vapor deposition (PECVD); Raman spectroscopy; transmission electron microscopy (TEM)

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; FILM PREPARATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYDROGENATION; NANOCRYSTALLINE SILICON; NANOCRYSTALS; PLASMA CVD; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; THIN FILMS; X RAY DIFFRACTION;

A-SI:H; HYDROGENATED SILICON; HYDROGENATED SILICONS (SI:H); NANOCRYSTALLINES; NC-SI:H; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN CHARACTERIZATION; SILICON THIN FILM; STRUCTURAL EVOLUTION; TRANSMISSION ELECTRON MICROSCOPY;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 79952955004     PISSN: 03770486     EISSN: 10974555     Source Type: Journal    
DOI: 10.1002/jrs.2711     Document Type: Article

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