The role of dangling bonds in the electronic and vibrational properties of hydrogenated amorphous silicon nitrides (a-Si1_xNx:H)

Journal of Raman Spectroscopy

Volumn 39, Issue 2, 2008, Pages 186-191

  Cataliotti, Rosario Sergio ^a,b   Compagnini, Giuseppe ^a  

^a UNIVERSITY OF CATANIA   (Italy)

^b UNIVERSITY OF PERUGIA   (Italy)

Author keywords

Dangling bonds; Electronic properties; Photoluminescence; Recombination processes; Silicon nitrides

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; DANGLING BONDS; EMISSION SPECTROSCOPY; HYDROGENATION; PHOTOLUMINESCENCE; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; SILICON WAFERS; SURFACE SEGREGATION;

AMORPHOUS SILICON NITRIDE; DEPOSITION CONDITIONS; MOLAR RATIO; PLASMA CHAMBERS; RECOMBINATION PROCESS; SAMPLE COMPOSITION; SI DANGLING BONDS; SPECTROSCOPIC TECHNIQUE; THIN-FILMS; VIBRATIONAL PROPERTIES;

ELECTRONIC PROPERTIES;

EID: 51549114614     PISSN: 03770486     EISSN: 10974555     Source Type: Journal    
DOI: 10.1002/jrs.1832     Document Type: Conference Paper

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