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Applied Physics Letters

Volumn 98, Issue 11, 2011, Pages

Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers

(3) Tsai, Miao Chan a Yen, Sheng Horng b Kuo, Yen Kuang a

a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION (Taiwan)

b EPISTAR CORPORATION (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALGAN; BARRIER THICKNESS; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; ELECTRONS AND HOLES; HOLE CARRIERS; OUTPUT POWER; SIMULATION APPROACH;

LIGHT EMISSION; ULTRAVIOLET RADIATION;

LIGHT EMITTING DIODES;

EID: 79952938784 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3567786 Document Type: Article

Times cited : (42)

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- APSYS by Crosslight Software Inc., Burnaby, Canada
- APSYS by Crosslight Software Inc., Burnaby, Canada, http://www. crosslight.com.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.