Current-induced degradation of high performance deep ultraviolet light emitting diodes

Applied Physics Letters

Volumn 96, Issue 21, 2010, Pages

  Moe, Craig G ^a   Reed, Meredith L ^a   Garrett, Gregory A ^a   Sampath, Anand V ^a   Alexander, Troy ^a   Shen, Hongen ^a   Wraback, Michael ^a   Bilenko, Yuriy ^b   Shatalov, Maxim ^b   Yang, Jinwei ^b   Sun, Wenhong ^b   Deng, Jianyu ^b   Gaska, Remis ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; CAPACITANCE VOLTAGE MEASUREMENTS; CONSTANT CURRENT; CURRENT INJECTIONS; DEEP-ULTRAVIOLET LIGHT-EMITTING DIODES; ELEVATED TEMPERATURE; INDUCED DEGRADATION; JUNCTION TEMPERATURES; LIFETIME MEASUREMENTS; P-N JUNCTION; SINGLE-CHIP; TIME-RESOLVED PHOTOLUMINESCENCE;

DEGRADATION; LIGHT EMISSION; POINT DEFECTS; SEMICONDUCTOR JUNCTIONS; ULTRAVIOLET RADIATION;

LIGHT EMITTING DIODES;

EID: 77956236024     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3435485     Document Type: Article

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