Modelling of the transition from a planar faceted front to equiaxed growth: Application to photovoltaic polycrystalline silicon

Journal of Crystal Growth

Volumn 311, Issue 1, 2008, Pages 20-25

  Mangelinck Noël, Nathalie ^a   Duffar, Thierry ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

A1. Defects; A1. Dendrites; A1. Growth model; A1. Nucleation; B2. Semiconducting silicon; B3. Solar cells

Indexed keywords

DENDRITES (METALLOGRAPHY); GROWTH (MATERIALS); METAL CASTINGS; NEURONS; NONMETALS; NUCLEATION; PHOTOVOLTAIC CELLS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SOLAR CELLS; SOLAR EQUIPMENT; TEXTURES;

A1. DEFECTS; A1. DENDRITES; A1. GROWTH MODEL; A1. NUCLEATION; B2. SEMICONDUCTING SILICON; B3. SOLAR CELLS;

SEMICONDUCTING SILICON;

EID: 57649183671     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.011     Document Type: Article

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