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Volumn 2000-January, Issue , 2000, Pages 965-967

Ge concentrator cells for III-V multijunction devices

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); GERMANIUM; OPEN CIRCUIT VOLTAGE;

EID: 84949547188     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916046     Document Type: Conference Paper
Times cited : (21)

References (7)
  • 4
    • 0023568894 scopus 로고
    • sc vs. Irradiance relationship for silicon and III-V concentrator cells
    • sc vs. irradiance relationship for silicon and III-V concentrator cells," 19th IEEE PVSC, 1987, pp. 1390-1395.
    • (1987) 19th IEEE PVSC , pp. 1390-1395
    • Gee, J.M.1
  • 5
    • 84949580559 scopus 로고    scopus 로고
    • R.R. King, Spectrolab (unpublished)
    • R.R. King, Spectrolab (unpublished).
  • 6
    • 84949580560 scopus 로고    scopus 로고
    • Lens transmission data provided by D. King, Sandia National Laboratories
    • Lens transmission data provided by D. King, Sandia National Laboratories.
  • 7
    • 0031361244 scopus 로고    scopus 로고
    • Projected performance of three- and four-junction devices using GaAs and GaInP
    • S.R. Kurtz, D. Myers, and J.M. Olson, "Projected performance of three- and four-junction devices using GaAs and GaInP," 26th IEEE PSVC, 1997, pp. 875-878.
    • (1997) 26th IEEE PSVC , pp. 875-878
    • Kurtz, S.R.1    Myers, D.2    Olson, J.M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.