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Volumn 96, Issue 4, 2010, Pages

Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band

(7) Bordel, Damien a Guimard, Denis a Rajesh, Mohan a Nishioka, Masao a Augendre, Emmanuel b Clavelier, Laurent b Arakawa, Yasuhiko a,c

a INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

b CEA LETI (France)

c UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS SUBSTRATES; GERMANIUM-ON-INSULATOR; HIGH DENSITY; INAS/GAAS QUANTUM DOTS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MONOLITHIC INTEGRATION; OPTICAL QUALITIES; PEAK LINEWIDTH; PHOTOLUMINESCENCE INTENSITIES; ROOM TEMPERATURE; SELF-ASSEMBLED; SINGLE QD; STRUCTURAL QUALITIES;

GALLIUM ALLOYS; GERMANIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLITHIC INTEGRATED CIRCUITS; ORGANIC CHEMICALS; ORGANOMETALLICS; SURFACE ROUGHNESS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 75749134955 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3292591 Document Type: Article

Times cited : (45)

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