Simulations of silicon nanocrystals embedded in oxide for nanoelectronic applications

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 3, 2011, Pages 819-822

  Armeanu, Dumitru ^a   Leroy, Yann ^a   Cordan, Anne Sophie ^a  

^a UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

Finite element method; Model; Nanocrystal; Non volatile memory; Tunnel current

Indexed keywords

CURRENT RANGE; DIRECT TUNNELING; DISCRETE ENERGY LEVELS; FINITE-ELEMENT APPROACH; FLOATING GATES; GATE ELECTRODES; MEMORY APPLICATIONS; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; NANOCRYSTAL DENSITY; NANOELECTRONIC APPLICATIONS; NON-VOLATILE MEMORIES; OXIDE THICKNESS; PHYSICAL PARAMETERS; SILICON NANOCRYSTALS; SINGLE-ELECTRON CHARGING; SPHERICAL NANOCRYSTALS; SUB-BANDS; TUNNEL CURRENT;

FINITE ELEMENT METHOD; OPTICAL WAVEGUIDES; SINGLE ELECTRON TRANSISTORS;

NANOCRYSTALS;

EID: 79952659605     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000274     Document Type: Article

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