Electrostatic coupling between nanocrystals in a quantum flash memory

Solid-State Electronics

Volumn 50, Issue 2, 2006, Pages 205-208

  Cordan, A S ^a   Leroy, Y ^a   Leriche, B ^a  

^a UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

Electrostatic coupling; Floating gate; Nanocrystals; Simulation; Tunneling

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; ELECTROSTATICS; NANOSTRUCTURED MATERIALS; QUANTUM THEORY;

ELECTROSTATIC COUPLING; FLOATING GATE; NANOCRYSTALS;

FLASH MEMORY;

EID: 32344438241     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.12.019     Document Type: Article

References (17)

1. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E.F. Crabbe, and K. Chan A silicon nanocrystals based memory Appl Phys Lett 68 10 1996 1377 1379
2. H.-S.P. Wong, D.J. Frank, P.M. Solomon, C.H.J. Wann, and J.J. Welser Nanoscale CMOS Proc IEEE 87 4 1999 537 570
3. S. Lombardo, B.D. Salvo, C. Gerardi, and T. Baron Silicon nanocrystal memories Micro Eng 72 2004 388 394
4. 2 layers by low energy ion implantation J Appl Phys 95 10 2004 5696 5702
5. G. Iannaccone, and P. Coli Three-dimensional simulation of nanocrystal flash memories Appl Phys Lett 78 14 2001 2046 2048
6. A. Thean, and J.P. Leburton 3-D computer simulation of single-electron charging in silicon nanocrystal floating gate flash memory devices IEEE Electron Dev Lett 22 3 2001 148 150
7. F. Rana, S. Tiwari, and J.J. Welser Kinetic modelling of electron tunneling processes in quantum dots coupled to field-effect transistors Superlattices Microstruct 23 3-4 1998 756 770
8. J. Sée, P. Dollfus, S. Galdin, and P. Hesto Electronic properties of semiconductor quantum dots for coulomb blockade applications Physica E 21 2004 496 500
9. J.S. Sim, J.D. Lee, and B.-G. Park The simulation of single-charging effects in the programming characteristics of nanocrystal memories Nanotechnology 15 2004 S603 S611
10. J. Bardeen Tunneling from a many-particle point of view Phys Rev Lett 6 2 1961 57 59
11. T. Baron, P. Gentile, N. Magnea, and P. Mur Single-electron charging effect in individual Si nanocrystals Appl Phys Lett 79 8 2001 1175 1177
12. Mathieu H. Physique des semiconducteurs et des composants électriques. 3rd Edition, Masson, 1996, p. 36-40.
13. Bonafos C, Ben Assayag G, Claverie A. private communication, 2004.
14. Durand E. Electrostatique: problèmes généraux des conducteurs, vol. 2, Masson, 1966, p. 200-1.
15. F. Giustino, and A. Pasquarello Electronic and dielectric properties of a suboxide interlayer at the silicon-oxide interface in MOS devices Surf Sci 586 2005 183 191
16. Comsol, Comsol Multiphysics Reference Manual, version 3.2, 2005.
17. Y. Leroy, A. Cordan, and A. Goltzené Variance analysis of the coulomb blockade parameters in nanometer-size disordered arrays J Appl Phys 90 2 2001 953 957