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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 3, 2011, Pages 767-770

Influence of precipitates on the kinetics of iron gettering from the Si wafers by the Al layers

(3) Sarikov, Andrey a Naseka, Victor a Litovchenko, Vladimir a

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

Author keywords

Al gettering; Computer modelling; Crystalline Si; Iron impurity

Indexed keywords

COMPUTER MODELLING; CRYSTALLINE SI; GETTERING; GETTERING EFFICIENCY; GETTERING TREATMENTS; IRON ATOMS; IRON CONCENTRATIONS; IRON GETTERING; IRON IMPURITY; KINETIC MODELS; METAL ATOMS; METAL IMPURITIES; MINORITY CARRIER; PRECIPITATE DISSOLUTION; SI SOLAR CELLS; SI WAFER; SOLAR CELL EFFICIENCIES; TEMPERATURE REGIMES; THEORETICAL STUDY; THERMAL ANNEALS;

ALUMINUM; CRYSTALLINE MATERIALS; DISSOLUTION; EXTRACTION; HEAVY METALS; IMPURITIES; PRECIPITATES; PRECIPITATION (CHEMICAL); SILICON; SILICON WAFERS; SOLAR CELLS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79952644359 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201000196 Document Type: Article

Times cited : (1)

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