Gettering impurities from crystalline silicon by aluminum diffusion using a porous silicon layer

Physica Status Solidi C: Conferences

Volumn 2, Issue 9, 2005, Pages 3486-3490

  Khedher, N ^a   Hajji, M ^a   Bessais B ^a   Ezzaouia, H ^a   Selmi, A ^b   Bennaceur, R ^a  

^a Institut National de Recherche Scientifique et Technique Tunis   (Tunisia)

^b FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; DIFFUSION; HALL EFFECT; HEAT TREATMENT;

CARRIER DIFFUSION LENGTH; CRYSTALLINE SILICON; LIGHT BEAM INDUCED CURRENT (LBIC) TECHNIQUE; METAL IMPURITIES;

POROUS SILICON;

EID: 27344438743     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461231     Document Type: Conference Paper

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