Solar cells prepared on multicrystalline silicon subjected to new gettering and passivation treatments

Solar Energy Materials and Solar Cells

Volumn 72, Issue 1-4, 2002, Pages 343-351

  Litovchenko, V G ^a   Klyuis, N I ^a   Evtukh, A A ^a   Efremov, A A ^a   Sarikov, A V ^a   Popov, V G ^a   Kostylyov, V P ^a   Rasamakin, Yu V ^a   Haessler, Ch ^b   Koch, W ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b BAYER AG   (Germany)

Author keywords

Al layer; Developed surface; Diamond like films; Gettering; Multicrystalline silicon; Plasma treatments

Indexed keywords

CRYSTALLINE MATERIALS; DEPOSITION; DIAMOND LIKE CARBON FILMS; DIFFUSION; PASSIVATION; PLASMAS; SILICON WAFERS;

GETTERING; MULTICRYSTALLINE SILICON;

SILICON SOLAR CELLS;

EID: 0036533101     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(01)00182-9     Document Type: Conference Paper

References (12)

1. Purification of metallurgical-grade silicon by porous-silicon etching
2. Efficiency of nanocavity backside gettering in multicrystalline silicon wafers
3. Standard test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady state surface photovoltage