Ultrafast carrier dynamics in Inx Ga1-x N (0001) epilayers: Effects of high fluence excitation

Applied Physics Letters

Volumn 88, Issue 12, 2006, Pages

  Lioudakis, Emmanouil ^a   Othonos, Andreas ^a   Dimakis, Emmanouil ^b,c   Iliopoulos, Eleftherios ^b,c   Georgakilas, Alexandros ^b,c  

^a UNIVERSITY OF CYPRUS   (Cyprus)

^b UNIVERSITY OF CRETE   (Greece)

^c INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTICS; BAND STRUCTURE; CARRIER COMMUNICATION; ELECTRIC EXCITATION; GALLIUM NITRIDE; OSCILLATIONS; PHONONS; REFLECTION; STIMULATED EMISSION;

AUGER PROCESS; EPILAYERS; FLUENCE EXCITATION; TRANSIENT DIFFERENTIAL TRANSMISSION; ULTRAFAST CARRIER;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33645511270     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2190456     Document Type: Article

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