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Volumn 257, Issue 13, 2011, Pages 5480-5483
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Behavior of oxygen in zinc oxide films through thermal annealing and its effect on sheet resistance
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Author keywords
Oxide semiconductor; Post annealing; Thermal desorption spectroscopy (TDS); X ray diffraction (XRD); Zinc oxide
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Indexed keywords
ANNEALING;
DEPOSITION;
DESORPTION;
II-VI SEMICONDUCTORS;
METALLIC FILMS;
OXIDE FILMS;
OXIDE SEMICONDUCTORS;
SHEET RESISTANCE;
THERMAL DESORPTION SPECTROSCOPY;
WIDE BAND GAP SEMICONDUCTORS;
X RAY DIFFRACTION;
ZINC OXIDE;
CRYSTALLINITIES;
OXYGEN AMBIENT;
OXYGEN ISOTOPES;
POST ANNEALING;
POST DEPOSITION ANNEALING;
SIMS ANALYSIS;
THERMAL DESORPTION SPECTROSCOPIES (TDS);
THERMAL-ANNEALING;
OXYGEN VACANCIES;
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EID: 79952535336
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2010.11.128 Document Type: Article |
Times cited : (15)
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References (17)
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