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Volumn 257, Issue 13, 2011, Pages 5480-5483

Behavior of oxygen in zinc oxide films through thermal annealing and its effect on sheet resistance

Author keywords

Oxide semiconductor; Post annealing; Thermal desorption spectroscopy (TDS); X ray diffraction (XRD); Zinc oxide

Indexed keywords

ANNEALING; DEPOSITION; DESORPTION; II-VI SEMICONDUCTORS; METALLIC FILMS; OXIDE FILMS; OXIDE SEMICONDUCTORS; SHEET RESISTANCE; THERMAL DESORPTION SPECTROSCOPY; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; ZINC OXIDE;

EID: 79952535336     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.11.128     Document Type: Article
Times cited : (15)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.