Late-news paper:4 inch QVGA AMOLED driven by the threshold voltage controlled amorphous GIZO (Ga2O3-In2O 3-ZnO) TFT

Digest of Technical Papers - SID International Symposium

Volumn 39, Issue 2, 2008, Pages 633-636

  Son, Kyoung Seok ^a   Kim, Tae Sang ^a   Jung, Ji Sim ^a   Ryu, Myung Kwan ^a   Park, Kyung Bae ^a   Yoo, Byung Wook ^a   Kim, Jung Woo ^a   Lee, Young Gu ^a   Kwon, Jang Yeon ^a   Lee, Sang Yoon ^a   Kim, Jong Min ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISPLAY DEVICES; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); THIN FILM TRANSISTORS; ZINC OXIDE;

BACK CHANNELS; CHANNEL LENGTH; HIGH MOBILITY; MASK PROCESS; MASS PRODUCTION; POST PROCESS; VOLTAGE STANDARD; VOLTAGE-CONTROLLED;

THRESHOLD VOLTAGE;

EID: 54549123492     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3069743     Document Type: Conference Paper

References (6)

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2. P. Barquinha, A. Pimentel, A. Marques, L. Pereira, R. Martins, E. Fortunato, "Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide", J. Non-Cryst. Solids, Vol. 352, pp. 1749-1752 (2006).
3. N. L. Dehuff, E.S. Kettenring, D. Hong, H.Q. Chiang, J.F. Wager, R.L. Hoffman, C.H. Park, D.A. Keszler, "Transparent thin-film transistors with zinc indium oxide channel layer", J. Appl. Phys. 97, 064505 (2005)
4. S.J. Pearton, D.P. Norton, K. Ip, Y.W. Heo, T. Steiner, "Recent advances in processing of ZnO", J. Vac. Sci. Technol. B22(3), pp. 932-948 (2004))
5. D. Hong, J.F. Wager, "Passivation of zinc-tin-oxide thin-film transistors", J. Vac. Sci. Technol. B23(6), L25-L27 (2005)
6. K.S. Son, D.L. Choi, H.N. Lee, W.G. Lee, "The interfacial reaction between ITO and silicon nitride deposited by PECVD in fringe-field switching device", Current Applied Physics, Vol. 2, pp. 229-232 (2002)