276nm substrate-free flip-chip AlGaN light-emitting diodes

Applied Physics Express

Volumn 4, Issue 3, 2011, Pages

  Hwang, Seongmo ^a   Morgan, Daniel ^a   Kesler, Amanda ^a   Lachab, Mohamed ^b   Zhang, Bin ^a   Heidari, Ahmad ^a   Nazir, Haseeb ^a   Ahmad, Iftikhar ^a   Dion, Joe ^a   Fareed, Qhalid ^b   Adivarahan, Vinod ^a   Islam, Monirul ^a   Khan, Asif ^b  

^a Nitek Inc   (United States)

^b University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABLATION PROCESS; ALGAN; ALN; FLIP CHIP; JUNCTION AREA; LASER-ASSISTED; LED CHIPS; LED STRUCTURE; LIFT-OFF PROCESS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MULTIPLE QUANTUM WELLS; OPTICAL CHARACTERIZATION; PEAK EMISSIONS; PHYSICAL DIMENSIONS; SAPPHIRE SUBSTRATES; SUBSTRATE-FREE;

FLIP CHIP DEVICES; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

LIGHT EMITTING DIODES;

EID: 79952506655     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.032102     Document Type: Article

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