Effective heat dissipation and higher light extraction efficiency of GaN vertical light emitting diodes for solid state lighting applications

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Chu, Chen Fu ^b   Fan, Feng Hsu ^b,c   Cheng, Chao Chen ^b   Liu, Wen Huan ^b   Chu, Jiunn Yi ^b   Cheng, Hao Chun ^b   Lin, Chia Feng ^c   Chen, Kuei Ting ^c   Tran, Chuong Anh ^a   Doan, Trung ^a  

^a SemiLEDs Corp   (United States)

^b Semi Photonics   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL LIGHT SOURCES; CURRENT SPREADING; GAN BASED LED; GAN LAYERS; HEAT DISSIPATION; HEAT DISSIPATION CAPABILITY; HIGH POWER WHITE LED; JUNCTION TEMPERATURES; LIGHT EXTRACTION; LIGHT OUTPUT; LIGHT-EXTRACTION EFFICIENCY; OPERATION VOLTAGE; SOLID-STATE LIGHTING APPLICATION; SURFACE ENGINEERING; TOP SURFACE; VERTICAL LIGHT-EMITTING DIODES;

EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; SURFACES;

LIGHT EMITTING DIODES;

EID: 70349094660     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880942     Document Type: Article

References (5)

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