Reliability of AlGaN-based deep UV LEDs on sapphire

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6134, Issue , 2006, Pages

  Shatalov, Maxim ^a   Gong, Zheng ^a   Gaevski, Mikhail ^a   Wu, Shuai ^a   Sun, Wenhong ^a   Adivarahan, Vinod ^a   Khan, M Asif ^a  

^a University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC IMPEDANCE; ACTIVATION ENERGY; ALUMINUM COMPOUNDS; CURRENT DENSITY; DEGRADATION; RELIABILITY; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

BIAS DEPENDENT POWER DEGRADATION; PUMP CURRENT DENSITY; RELIABILITY MEASUREMENTS; THERMAL IMPEDANCE;

LIGHT EMITTING DIODES;

EID: 33646727159     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.647204     Document Type: Conference Paper

References (22)

1. M. Asif Khan, M. Shatalov, H. P. Maruska, H. M. Wang, E. Kuokstis, "III-nitride UV devices", Jpn. J. Appl. Phys. 44 7191-7206 (2005).
2. W. H. Sun, V. Adivarahan, M. Shatalov, Y. B. Lee, S. Wu, J. W. Yang, M. A. Khan, "Continuous wave milliwatt power AlGaN light emitting diodes at 280 nm", Jpn. J. Appl. Phys. 43 L1419-L1421 (2004).
3. M. Khizar, Z. Y. Fan, K. H. Kim, J. Y. Lin, H. X. Jiang, "Nitride deep-ultraviolet light-emitting diodes with microlens array" Appl. Phys. Lett. 86 173504-1-173504-3 (2005).
4. C. G. Moe, H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, S. P. DenBaars, C. Hussel, D. Emerson, "Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide", Jpn. J. Appl. Phys. 44 L502-L504 (2005).
5. A. J. Fischer, A. A. Allerman, M. H. Crawford, K. H. A. Bogart, S. R. Lee, R. J. Kaplar, W. W. Chow, S. R. Kurtz, K. W. Fullmer, J. J. Figiel, "Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels", Appl. Phys. Lett. 84 3394-3396 (2004).
6. V. Adivarahan, J. P. Zhang, A. Chitnis, S. Wu, J. Sun, R. Pachipulusu, M. Shatalov, M. Asif Khan, "Sub-milliwatt power III-N light emitting diodes at 285 nm", Jpn. J. App. Phys. 41, L435-L436 (2002).
7. J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, G. Simin, J. W. Yang, M. Asif Khan, "Milliwatt power deep ultraviolet light emitting diodes over sapphire with emission at 278 nm", Appl. Phys. Lett. 81, 4910-4912 (2002).
8. K. H. Kim, Z. Y. Fan, M. Khizar, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, "AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers", Appl. Phys. Lett. 85, 4777-4779 (2004).
9. A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S. R. Darvish, P. Kung, M. Razeghi, "4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes", Appl. Phys. Lett. 83, 4701-4703 (2003).
10. J. P. Zhang, M. Asif Khan, W. H. Sun, H. M. Wang, C. Q. Chen, Q. Fareed, E. Kuokstis, J. W. Yang, "Pulsed atomic layer epitaxy of ultrahigh-quality AlxGa1-xN structures for deep ultraviolet emissions below 230 nm", Appl. Phys. Lett. 81, 4392-4394 (2002).
11. J. P. Zhang, H. M. Wang, M. E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, G. Simin, M. Asif Khan, "Crack-free thick AlGaN grown on sapphire using AlN/AlGaN supperlattice for strain management" Appl. Phys. Lett. 80, 3542-3544 (2002).
12. H. M. Wang, J. P. Zhang, C. Q. Chen, Q. Fareed, J. W. Yang, and M. A. Khan, "AlN/AlGaN supplattices as dislocation filter for low threading dislocation thick AlGaN layers on sapphire", Appl. Phys. Lett. 81, 604-606 (2002).
13. A. Chitnis, V. Adivarahan, J. Zhang, M. Shatalov, S. Wu, J. Yang, G. Simin, M. Asif Khan, X. Hu, Q. Fareed, R. Gaska, M. S. Shur, "Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes", Phys. Stat. Solidi (a) 200, 99-101 (2003).
14. W. H. Sun, J. P. Zhang, J. W. Yang, H. P. Maruska, M. Asif Khan, R. Liu, F. A. Ponce, "Fine structure of AlN/AlGaN superlatitice grown by pulsed atomic layer epitaxy for dislocation filtering", Appl. Phys. Lett. 87, 211915-1-211915-3 (2005).
15. A. Chitnis, V. Adivarahan, J. P. Zhang, S. Wu, J. Sun, R. Pachipulusu, V. Mandavilli, M. Gaevski, M. Shatalov, M. Asif Khan, "High dc Power 325 nm Emission Deep UV LEDs over sapphire", Electron. Lett. 25, 1709-1711 (2002).
16. A. Chitnis, S. Jason, V. Mandavilli, R. Pachipulusu, S. Wu, M. Gaevski, V. Adivarahan, J. P. Zhang, M. Asif Khan, A. Sarua, M. Kuball, "Self-heating effects at high pump currents in deep UV light emitting diodes at 325nm", Appl. Phys. Lett. 81, 3491-3493 (2002).
17. S. Wu, V. Adivarahan, M. Shatalov, A. Chitnis, W. H. Sun, M. Asif Khan, "Micro-pixel design milliwatt power 254 nm emission light emitting diodes", Jpn. J. Appl. Phys. 43, L1035-L1037 (2004).
18. J. P. Zhang, H. M. Wang, W. H. Sun, V. Adivarahan, S. Wu, A.Chitnis, C. Q. Chen, M. Shatalov, E. Kuokstis, J. W. Yang, M. Asif Khan, "High-quality AlGaN layers over pulsed atomic layer epitaxially grown AlN templates for deep ultraviolet light emitting diodes", J. Electron. Mater. 32 364-370 (2003).
19. V. Adivarahan, S. Wu, W. H. Sun, V. Mandavilli, M. S. Shatalov, G. Simin, J. W. Yang, H. P. Maruska, M. Asif Khan, "High-power deep UV LEDs based on a novel micro-pixel design", Appl, Phys. Lett. 85 1838-1840 (2004).
20. I. Martil, E. Redondo, A. Ojeda, "Influence of defects on the electrical and optical characteristics of blue light-emitting diodes based on III-V nitrides", J. Appl. Phys. 81 2442-2444 (1997).
21. X. A. Cao, E. B. Stokes, P. M. Sandvik, S. F. LeBoeuf, J. Kretchmer, D. Walker, "Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes", IEEE Electron. Dev. Lett. 23 535 (2002).
22. K. Hobo, H. Sone, T. Kato, M. Hirotani, T. Saka, "Evidence of correlation between dark spots and dislocations originating from substrate in light-emitting diodes" Jpn. J. Appl. Phys. 44 1004-1008 (2005).