SCOPUS 정보 검색 플랫폼

Volumn 88, Issue 5, 2011, Pages 817-821

GeTe phase change material and Ti based electrode: Study of thermal stability and adhesion

(10) Loubriat, S a Muyard, D a Fillot, F a Roule, A a Veillerot, M a Barnes, J P a Gergaud, P a Vandroux, L a Verdier, M b Maitrejean, S a

a CEA GRENOBLE (France)

b GRENOBLE INSTITUTE OF TECHNOLOGY (France)

Author keywords

Adhesion; GeTe; Nanoindentation; Phase Change Memory; TiN

Indexed keywords

ADHESION ENERGY; CHEMICAL AFFINITIES; CHEMICAL INTERACTIONS; ELECTRODE MATERIAL; FOUR-POINT BENDING; GETE; INFORMATION STORAGE; INTERFACIAL LAYER; MECHANICAL CHARACTERIZATIONS; SECONDARY ION MASS SPECTROSCOPY; THERMAL STABILITY;

ADHESION; ELECTROCHEMICAL ELECTRODES; NANOINDENTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR STORAGE; TELLURIUM; TELLURIUM COMPOUNDS; TITANIUM; TITANIUM NITRIDE; X RAY DIFFRACTION;

PHASE CHANGE MEMORY;

EID: 79952486930 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2010.07.032 Document Type: Conference Paper

Times cited : (16)

References (16)

1
- 84890299454
- ISTE Ltd. John Wiley & Sons, Inc.
- B. De Salvo Silicon Non-volatile Memories: Path of Innovation 2009 ISTE Ltd. John Wiley & Sons, Inc.
- (2009) Silicon Non-volatile Memories: Path of Innovation
- De Salvo, B.¹

2
- 30344471121
- A.L. Lacaita Solid State Electron. 50 2006 24
- (2006) Solid State Electron. , vol.50 , pp. 24
- Lacaita, A.L.¹

3
- 55049141125
- S.H. Hong, and H. Lee Jpn. J. Appl. Phys. 47 2008 3372
- (2008) Jpn. J. Appl. Phys. , vol.47 , pp. 3372
- Hong, S.H.¹ Lee, H.²

4
- 69049103004
- V.A. Venugopal, G. Ottaviani, C. Bresolin, D. Erbetta, A. Modelli, and E. Varesi J. Elec. Materi. 38 2009 2063
- (2009) J. Elec. Materi. , vol.38 , pp. 2063
- Venugopal, V.A.¹ Ottaviani, G.² Bresolin, C.³ Erbetta, D.⁴ Modelli, A.⁵ Varesi, E.⁶

5
- 2942593996
- S.G. Alberici, R. Zonca, and B. Pashmakov Appl. Surf. Sci. 231 2 2004 821
- (2004) Appl. Surf. Sci. , vol.231 , Issue.2 , pp. 821
- Alberici, S.G.¹ Zonca, R.² Pashmakov, B.³

6
- 79952484636
- C. Cabral, K.N. Chen, L. Krusin-Elbaum, and V. Deline Appl. Phys. Lett. 90 2007
- (2007) Appl. Phys. Lett. , vol.90
- Cabral, C.¹ Chen, K.N.² Krusin-Elbaum, L.³ Deline, V.⁴

7
- 70349979937
- IEEE, Piscataway NJ, USA
- A. Fantini, L. Perniola, M. Armand, J.F. Nodin, V. Sousa, A. Persico, J. Cluzel, C. Jahan, S. Maitrejean, S. Lhostis, A. Roule, C. Dressler, G. Reimbold, B. De Salvo, P. Mazoyer, D. Bensahel, and F. Boulanger Comparative Assessment of GST and GeTe Materials for Application to Embedded Phase-change Memory Devices, IEEE International Memory Workshop, 10-14 May 2009, IMW '09 2009 IEEE, Piscataway NJ, USA p. 66
- (2009) Comparative Assessment of GST and GeTe Materials for Application to Embedded Phase-change Memory Devices, IEEE International Memory Workshop, 10-14 May 2009, IMW '09
- Fantini, A.¹ Perniola, L.² Armand, M.³ Nodin, J.F.⁴ Sousa, V.⁵ Persico, A.⁶ Cluzel, J.⁷ Jahan, C.⁸ Maitrejean, S.⁹ Lhostis, S.¹⁰ Roule, A.¹¹ Dressler, C.¹² Reimbold, G.¹³ De Salvo, B.¹⁴ Mazoyer, P.¹⁵ Bensahel, D.¹⁶ Boulanger, F.¹⁷

8
- 77951877290
- L. Perniola, V. Sousa, A. Fantini, E. Arbaoui, A. Bastard, M. Armand, A. Fargeix, C. Jahan, J.F. Nodin, A. Persico, D. Blachier, A. Toffoli, S. Loubriat, E. Gourvest, G. Betti Beneventi, H. Feldis, S. Maitrejean, S. Lhostis, A. Roule, O. Cueto, G. Reimbold, L. Poupinet, T. Billon, B. De Salvo, D. Bensahel, P. Mazoyer, R. Annunziata, P. Zuliani, and F. Boulanger Electron Devices Lett. 31 2010 488
- (2010) Electron Devices Lett. , vol.31 , pp. 488
- Perniola, L.¹ Sousa, V.² Fantini, A.³ Arbaoui, E.⁴ Bastard, A.⁵ Armand, M.⁶ Fargeix, A.⁷ Jahan, C.⁸ Nodin, J.F.⁹ Persico, A.¹⁰ Blachier, D.¹¹ Toffoli, A.¹² Loubriat, S.¹³ Gourvest, E.¹⁴ Betti Beneventi, G.¹⁵ Feldis, H.¹⁶ Maitrejean, S.¹⁷ Lhostis, S.¹⁸ Roule, A.¹⁹ Cueto, O.²⁰ more..

9
- 68249102787
- G. Bruns, P. Merkelbach, C. Schlockermann, M. Salinga, M. Wuttig, T.D. Happ, J.B. Philipp, and M. Kund Appl. Phys. Lett. 95 2009 043108
- (2009) Appl. Phys. Lett. , vol.95 , pp. 043108
- Bruns, G.¹ Merkelbach, P.² Schlockermann, C.³ Salinga, M.⁴ Wuttig, M.⁵ Happ, T.D.⁶ Philipp, J.B.⁷ Kund, M.⁸

10
- 0032148208
- R.H. Dauskardt, M. Lane, Q. Ma, and N. Krishna Eng. Fract. Mech. 61 1998 141
- (1998) Eng. Fract. Mech. , vol.61 , pp. 141
- Dauskardt, R.H.¹ Lane, M.² Ma, Q.³ Krishna, N.⁴

11
- 0026875935
- W.C. Oliver, and G.M. Pharr J. Mater. Res. 7 1992 1564
- (1992) J. Mater. Res. , vol.7 , pp. 1564
- Oliver, W.C.¹ Pharr, G.M.²

12
- 3042606295
- W.C. Oliver, and G.M. Pharr J. Mater. Res. 19 2004 3
- (2004) J. Mater. Res. , vol.19 , pp. 3
- Oliver, W.C.¹ Pharr, G.M.²

13
- 0033098327
- A. Schlieper, Y. Feutelais, S.G. Fries, B. Legendre, and R. Blachnik Calphad - Comput. Coupling Phase Diagrams Thermochem. 23 1999 1
- (1999) Calphad - Comput. Coupling Phase Diagrams Thermochem. , vol.23 , pp. 1
- Schlieper, A.¹ Feutelais, Y.² Fries, S.G.³ Legendre, B.⁴ Blachnik, R.⁵

14
- 0029288052
- H. Cordes, and R. Schmidfetzer J. Mater. Sci. - Mater. Electron. 6 1995 118
- (1995) J. Mater. Sci. - Mater. Electron. , vol.6 , pp. 118
- Cordes, H.¹ Schmidfetzer, R.²

15
- 85005941350
- K.M. Liechti, and Y.S. Chai J. Appl. Mech. - Trans. Asme 59 1992 295
- (1992) J. Appl. Mech. - Trans. Asme , vol.59 , pp. 295
- Liechti, K.M.¹ Chai, Y.S.²

16
- 0033320977
- Y. Wei, and J. Hutchinson Int. J. Fract. 95 1999 1
- (1999) Int. J. Fract. , vol.95 , pp. 1
- Wei, Y.¹ Hutchinson, J.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.