Thermal stability of Ge 2Sb 2Te 5 in contact with Ti and TiN

Journal of Electronic Materials

Volumn 38, Issue 10, 2009, Pages 2063-2068

  Venugopal, Vijayaharan A ^a,b   Ottaviani, Giampiero ^a,b   Bresolin, Camillo ^c   Erbetta, Davide ^c,d   Modelli, Alberto ^c   Varesi, Enrico ^c  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b Masem Laboratories   (Italy)

^c Numonyx   (Italy)

^d STMICROELECTRONICS   (Italy)

Author keywords

Chalcogenides; Phase change memory; Rutherford backscattering; Titanium; Titanium nitride; X ray diffraction

Indexed keywords

ADHESION PROBLEM; CHALCOGENIDE FILMS; DECOMPOSITION RATE; HIGHER TEMPERATURES; METALLIC THIN FILMS; RUTHERFORD BACKSCATTERING; THERMAL STABILITY; THERMAL TREATMENT;

ADHESION; BACKSCATTERING; CHALCOGENIDES; CONTACT RESISTANCE; DIFFRACTION; GERMANIUM; PHASE CHANGE MEMORY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TELLURIUM COMPOUNDS; THERMODYNAMIC STABILITY; TITANIUM; VACUUM; VACUUM FURNACES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

TITANIUM NITRIDE;

EID: 69049103004     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0856-6     Document Type: Article

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