Influence of in composition on exciton confined in self-formed In xGa1-xN/GaN quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 43, Issue 5, 2011, Pages 1076-1079

  Zhao, Xu ^a   Wei, Shu Yi ^a   Xia, Cong Xin ^a  

^a HENAN NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; EFFECTIVE MASS APPROXIMATION; ELECTRON HOLE PAIRS; EMISSION WAVELENGTH; EXCITON STATE; EXCITON-BINDING ENERGY; EXPERIMENTAL MEASUREMENTS; OSCILLATOR STRENGTHS; QUANTUM DOT; STRUCTURAL PARAMETER; VARIATIONAL APPROACHES; WURTZITES;

ELECTRIC FIELDS; EXCITONS; GALLIUM; NUCLEAR ENERGY; POTENTIAL ENERGY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; ZINC SULFIDE;

BINDING ENERGY;

EID: 79952486443     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2011.01.003     Document Type: Article

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